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DMN3051L
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
Steady
State
t<5s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I DM
I S
4.5
3.5
5.8
4.9
20
2
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady state
t < 5s
T A = +25°C
T A = +70°C
Steady state
t < 5s
P D
R ? JA
P D
R ? JA
R ? JC
T J, T STG
0.7
0.44
182
109
1.4
0.85
94
56
25
-55 to +150
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
800
? 80
? 800
V
nA
nA
V GS = 0V, I D = 250μA
V DS = 28V, V GS = 0V
V GS = ±12V, V DS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS(ON)
|Y fs |
V SD
1.3
??
?
?
?
1.9
33
54
5
0.78
2.2
38
64
?
1.16
V
m ?
S
V
V DS = V GS , I D = 250 μA
V GS = 10V, I D = 5.8A
V GS = 4.5V, I D = 5.0A
V DS = 5V, I D = 3.1A
V GS = 0V, I S = 2.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
??
??
??
??
??
??
??
??
424
115
81
1.51
9.0
1.3
1.3
3.4
6.2
13.9
2.8
?
?
?
??
??
??
??
??
??
??
??
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS = 5V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 10V, V DS = 15V, I D = 5.8A
V DD = 15V, V GS = 10V,
R L = 2.6 ? , R G = 3 ?
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN3051L
Document number: DS31347 Rev. 5 - 2
2 of 6
www.diodes.com
October 2013
? Diodes Incorporated
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